System Design of Dual Active Bridge (DAB) Converter Based on GaN HEMT Device

被引：0
|
作者：
Zhu, Minglin [1 ]
Shao, Chi [2 ]
Wang, Shitao [3 ]
Hang, Lijun [2 ]
He, Yuanbin [2 ]
Fan, Songli [1 ]
机构：
[1] Songjiang Power Supply Co, State Grid Shanghai, Shanghai, Peoples R China
[2] Hangzhou Dianzi Univ, Sch Automat, Hangzhou, Peoples R China
[3] State Grid, State Grid China Technal Coll, Jinan, Peoples R China
来源：
2019 22ND INTERNATIONAL CONFERENCE ON ELECTRICAL MACHINES AND SYSTEMS (ICEMS 2019) | 2019年
基金：
中国国家自然科学基金;
关键词：
DAB; GaN; power density; efficiency; gate drive;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The Dual active bridge (DAB) DC-DC converter is popular for its advantage of high power density, zero-voltage switching (ZVS) and bidirectional power flow capability. It is important to improve the power density and efficiency of DAB converter. With the development of wide band-gap semiconductor device, such as GaN HEMT, the efficiency and power density of DAB converter can be improved significantly by taking advantages of GaN HEMT superior performance. In this paper, a DAB converter design based on GaN HEMT Device is presented. The system design and design consideration of DAB converter is discussed in detail, and the optimal design of high frequency transformer is introduced. Moreover, the gate driver circuits and power circuits are designed carefully to minimize the parasitic inductances. Therefore, a useful reference for the practical application of DAB circuit design is provided. Finally, a prototype of 400W DAB is built in laboratory. The power density is calculated as 39W/inch(3) and the peak efficiency is more than 95%
引用
收藏
页码：1048 / 1053
页数：6
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