High Peak Power Operation of a 1-μm GaAs-Based Optically Pumped Semiconductor Laser

被引：3

作者：

Laurain, Alexandre ^{[1
]}

Wang, Tsuei-Lian ^{[1
]}

Yarborough, Michael J. ^{[1
]}

Hader, Jorg ^{[1
]}

Moloney, Jerome V. ^{[1
]}

Koch, Stephan W. ^{[2
]}

Kunert, Bernardette ^{[2
]}

Stolz, Wolfgang ^{[2
]}

机构：

[1] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

[2] Univ Marburg, Dept Phys, Ctr Mat Sci, D-3550 Marburg, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2012年 / 24卷 / 05期

关键词：

High peak power; optically pumped semiconductor laser; pulsed laser; vertical-external-cavity surface-emitting lasers (VECSELs); DISK LASERS;

D O I：

10.1109/LPT.2011.2179643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 mu s and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28% is demonstrated at maximum power. The key parameters limiting the output power are discussed.

引用

页码：380 / 382

页数：3

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