Heteroleptic Cyclopentadienyl-Amidinate Precursors for Atomic Layer Deposition (ALD) of Y, Pr, Gd, and Dy Oxide Thin Films

被引:28
|
作者
Seppala, Sanni [1 ]
Niinisto, Jaakko [1 ]
Blanquart, Timothee [1 ]
Kaipio, Mikko [1 ]
Mizohata, Kenichiro [2 ]
Raisanen, Jyrki [2 ]
Lansalot-Matras, Clement [3 ]
Noh, Wontae [3 ]
Ritala, Mikko [1 ]
Leskela, Markku [1 ]
机构
[1] Univ Helsinki, Dept Chem, Lab Inorgan Chem, Box 55, FI-00014 Helsinki, Finland
[2] Univ Helsinki, Dept Phys, POB 43, FI-00014 Helsinki, Finland
[3] AirLiquide Labs Korea, Yonsei Engn Res Pk,50 Yonsei Ro, Seoul 120749, South Korea
关键词
BETA-DIKETONATE; GATE DIELECTRICS; Y2O3; GD2O3; EPITAXY; HFO2;
D O I
10.1021/acs.chemmater.6b01869
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of rare-earth (RE) oxides (Y2O3, PrOx, Gd2O3, and Dy2O3) were deposited. by atomic layer deposition from liquid heteroleptic RE((PrCp)-Pr-i)(2)(Pr-i-amd) precursors with either water or ozone as the oxygen source. Film thickness, crystallinity, morphology, and composition were studied. Saturation was achieved with Gd2O3 when O-3 was used as the oxygen source at 225 degrees C and with Y2O3 with both oxygen sources at as high temperature as 350 degrees C. The growth rates were 0.90-1.3 angstrom/cycle for these processes. PrOx was challenging to deposit with both oxygen sources but with long, 20 s purges after the water pulses uniform films could be deposited. However, saturation was not achieved. With Dy2O3, uniform films could be deposited and the Dy((PrCp)-Pr-i)(2)(Pr-t-amd)/O-3 process was close to saturation at 300 degrees C. The different oxygen sources had an effect on the crystallinity and impurity contents of the films in all the studied processes. Whether ozone water was better choice for oxygen source depended on the metal oxide material that was deposited.
引用
收藏
页码:5440 / 5449
页数:10
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