High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

被引：76

作者：

Rong, Xin ^{[1
]}

Wang, Xinqiang ^{[1
,2
]}

Ivanov, Sergey V. ^{[3
]}

Jiang, Xinhe ^{[1
]}

Chen, Guang ^{[1
]}

Wang, Ping ^{[1
]}

Wang, Weiying ^{[1
]}

He, Chenguang ^{[1
]}

Wang, Tao ^{[1
]}

Schulz, Tobias ^{[4
]}

Albrecht, Martin ^{[4
]}

Jmerik, Valentin N. ^{[3
]}

Toropov, Alexey A. ^{[3
]}

Ratnikov, Viacheslav V. ^{[3
]}

Kozlovsky, Vladimir I. ^{[5
,6
]}

Martovitsky, Victor P. ^{[5
]}

Jin, Peng ^{[7
,8
]}

Xu, Fujun ^{[1
]}

Yang, Xuelin ^{[1
]}

Qin, Zhixin ^{[1
]}

Ge, Weikun ^{[1
]}

Shi, Junjie ^{[1
]}

Shen, Bo ^{[1
,2
]}

机构：

[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

[3] Ioffe Inst, Polytekhn Skaya 26, St Petersburg 194021, Russia

[4] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany

[5] Russian Acad Sci, Lebedev Phys Inst, Leninsky Pr 53, Moscow 119991, Russia

[6] Natl Res Nucl Univ MEPhI, Kashirskoye Shosse 31, Moscow 115409, Russia

[7] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

[8] Chinese Acad Sci, Inst Semicond, Beijing Key Lab Low Dimens Semicond Mat & Devices, Beijing 100083, Peoples R China

来源：

ADVANCED MATERIALS | 2016年 / 28卷 / 36期

基金：

中国国家自然科学基金; 俄罗斯科学基金会;

关键词：

EMITTING-DIODES; ELECTRON-BEAM; EMISSION; WELLS; SEMICONDUCTORS; REALIZATION; EFFICIENCY; BLUE;

D O I：

10.1002/adma.201600990

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of approximate to 160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.

引用

页码：7978 / 7983

页数：6

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