High power handling RF MEMS design and technology

被引：14

作者：

Grenier, K ^{[1
]}

Dubuc, D ^{[1
]}

Ducarouge, B ^{[1
]}

Conedera, V ^{[1
]}

Bourrier, D ^{[1
]}

Ongareau, E ^{[1
]}

Derderian, P ^{[1
]}

Plana, R ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

MEMS 2005 MIAMI: TECHNICAL DIGEST | 2005年

关键词：

D O I：

10.1109/MEMSYS.2005.1453890

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF MicroElectroMechanical (MEMS) switches are usually limited in term of power handling. Self actuation and electromigration constitute indeed the main failure mechanisms related to medium and high RF power. To overcome these malfunctions, an original MEMS topology based on the use of two bridge levels is proposed in this paper. Both appropriate design and technology have been developed in order to enhance power capabilities of MEMS switches. A power handling of 8W in cold switching has finally been reached.

引用

页码：155 / 158

页数：4

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