High performance SOI and bulk CMOS 5GHz VCOs

被引：0

作者：

Kim, TY ^{[1
]}

Adams, A ^{[1
]}

Weste, N ^{[1
]}

机构：

[1] Univ Adelaide, Adelaide, SA 5005, Australia

来源：

2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a comparison of two 5GHz VCOs. One is implemented in an SOI process and the other in a conventional bulk CMOS process. The SOI design presents the lowest reported power (1.65mW, -110dBc/Hz@1MHz) in a 5GHz VCO, while the bulk device presents the lowest phase noise achieved in a 5GHz VCO (17.25mW, 126dBc/Hz@1MHz). The design tradeoffs are discussed.

引用

页码：93 / 96

页数：4

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