Intracavity Second Harmonic Generation Characteristics of Semiconductor Disk Laser

被引：1

作者：

Li, Zili ^{[1
]}

Song, Yanrong ^{[1
]}

Zhang, Peng ^{[1
]}

Zhang, Xiao ^{[1
]}

机构：

[1] Beijing Univ Technol, Coll Appl Sci, Beijing 100124, Peoples R China

来源：

SEMICONDUCTOR LASERS AND APPLICATIONS IV | 2010年 / 7844卷

关键词：

VECSEL; SHG; LBO; KTP; KNbO3; thermal management; SURFACE-EMITTING LASER;

D O I：

10.1117/12.869391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Optically pumped semiconductor disk laser use the InGaAs/GaAs quantum structures as the gain medium, and optically pumped at 808 nm by the Laser Diode. We have got the fundamental output at 1030 nm, and its highest output power is about 60 mW. Then, in straight cavity, we used LBO, KTP, KNbO3 as second harmonic generation crystal respectively, and obtain the green laser with maximum power of 8 mW. In folding cavity, we employed LBO as second harmonic generation crystal and got the laser at 515 nm with it's maximum power is 11mW. The characteristics of these crystals were discussed. Finally, we simulated the heat distribution of the gain chip by finite-element analysis method, and some measures of improving heat spread and output efficiency of the semiconductor chip.

引用

页数：7

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