Recent advances in HPM pulse measurement using resistive sensors

被引:0
|
作者
Kancleris, Z [1 ]
Dagys, M [1 ]
Simniskis, R [1 ]
Schamiloglu, E [1 ]
Agee, FJ [1 ]
机构
[1] Inst Semicond Phys, LT-2600 Vilnius, Lithuania
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The resistive sensor (RS), whose performance is based on the electron heating effect in semiconductors, has found application in high-power microwave (HPM) measurements. Our previous studies concentrating on the waveguide-type RS have demonstrated their advantages over conventional diodes that are also used to measure HIM pulses [I). The RS can detect about 60 dB greater power level, are resistant to large power overloads and demonstrate very good long-term stability. They can produce an output signal on the order of a few tens of volts without any amplification circuit and can resolve nanosecond duration HIM pulses. In this paper we present a brief overview of the waveguide-type RS as well as a survey of recent advances in the RS design.
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页码:189 / 192
页数:4
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