Modeling for the 2nd-bit effect of a nitride-based trapping storage flash EEPROM cell under two-bit operation

被引：26

作者：

Chang, YW ^{[1
]}

Lu, TC ^{[1
]}

Pan, S ^{[1
]}

Lu, CY ^{[1
]}

机构：

[1] Macronix Int Ltd, Hsinchu, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 02期

关键词：

EEPROM; flash memory; macromodel; multiple virtual ground AND (MXVAND); nitride-based trapping storage; NROM; 2nd-bit effect;

D O I：

10.1109/LED.2003.822671

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we propose a macromodeling approach for the nitride-based trapping storage Flash EEPROM cell with intriguing 2nd-bit effect. Both unusual I-D-V-D and I-D-V-G characteristics of this 2-bit Flash cell can be accurately modeled by the macromodel. It also provides insights into the special device characteristics of the programmed cell. Furthermore, we can use this model to correctly evaluate the read speed degradation resulting from 2nd-bit effect.

引用

页码：95 / 97

页数：3

共 27 条

[21] Two-bit/cell programming characteristics of high-density NOR-type flash memory device with recessed channel structure and spacer-type nitride layer
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[22] A novel 2-bit/cell nitride storage flash memory with greater than 1M P/E-cycle endurance
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[23] Length effect of spacer-type storage node in high-density 2-bit/cell silicon-oxide-nitride-oxide-silicon NOR flash cell based on recessed channel structure
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[24] Second-Bit-Effect-Free Multibit-Cell Flash Memory Using Si3N4/ZrO2 Split Charge Trapping Layer
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[27] A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell Storage Capability
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