Low-temperature LPE growth and characterization of InGaAsN thick layers

被引：1

作者：

Milanova, M. ^{[2
]}

Vitanov, P. ^{[1
]}

Sendova-Vassileva, M. ^{[1
]}

Koleva, G. ^{[2
]}

Popov, G. ^{[2
]}

机构：

[1] Cent Lab Solar Energy & New Energy Sources, 72 Tzarigradsko Chaussee Blvd, Sofia 1784, Bulgaria

[2] Cent Lab Appl Phys, Plovdiv 4000, Bulgaria

来源：

EUROPEAN MATERIALS RESEARCH SOCIETY CONFERENCE SYMPOSIUM: ADVANCED INORGANIC MATERIALS AND CONCEPTS FOR PHOTOVOLTAICS | 2011年 / 10卷

关键词：

dilute nitrides; InGaAsN; LPE; solar cells; NITROGEN; EFFICIENCY; ORIGIN;

D O I：

10.1016/j.egypro.2011.10.181

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This work demonstrates the possibility for low-temperature Liquid-Phase Epitaxy (LPE) growth of lattice matched to GaAs substrate dilute nitride InGaAsN layers with good crystalline quality and high Hall electron mobility. X-ray microanalysis and X-ray diffraction methods have been used to determine the composition and crystalline quality of the grown InGaAsN layers. Surface roughness is examined by atomic force microscopy. N-related local vibration modes are observed by Raman scattering. The Hall electron mobility and free carrier concentration have been measured in the temperature range 80-300K by conventional Van der Pauw method. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Organizers of European Materials Research Society (EMRS) Conference: Symposium on Advanced Inorganic Materials and Concepts for Photovoltaics.

引用

页数：5

共 50 条

[31] LPE GROWTH AND CHARACTERIZATION OF INGAASP INP MULTIQUANTUM WELL EPITAXIAL LAYERS
SASAI, Y
OGURA, M
KAJIWARA, T
JOURNAL OF CRYSTAL GROWTH, 1986, 78 (03) : 461 - 467
[32] Growth and characterization of small band gap (∼0.6 eV) InGaAsN layers on InP
Gokhale, MR
Wei, J
Wang, HS
Forrest, SR
APPLIED PHYSICS LETTERS, 1999, 74 (09) : 1287 - 1289
[33] LOW-TEMPERATURE INVESTIGATIONS OF ADSORBED LAYERS
NAUMOVETS, AG
FIZIKA NIZKIKH TEMPERATUR, 1994, 20 (11): : 1091 - 1115
[34] Low-temperature investigations of absorbed layers
Naumovets, A.G.
Fizika Nizkikh Temperatur (Kiev), 1994, 20 (11):
[35] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY ALGAINAS LPE LAYERS ON INP
YAMAZAKI, S
KOBAYASHI, M
SUGAWARA, M
NAKAJIMA, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C404 - C404
[36] Improvements in crystalline quality of thick GaN layers on GaAs (111)A by periodic insertion of low-temperature GaN buffer layers
Murakami, H
Kawaguchi, N
Kangawa, Y
Kumagai, Y
Koukitu, A
5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS, 2003, 0 (07): : 2141 - 2144
[37] THICK PLATINUM FILMS AS LOW-TEMPERATURE THERMOMETERS
BATKO, I
SOMORA, M
VANICKY, D
FLACHBART, K
MATEJ, V
PAVLIK, V
CRYOGENICS, 1992, 32 (07) : 683 - 684
[38] LPE GROWTH OF MISFIT DISLOCATION-FREE THICK IN1-XGAXAS LAYERS ON INP
NAKAJIMA, K
KOMIYA, S
AKITA, K
YAMAOKA, T
RYUZAN, O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) : 1568 - 1572
[39] LOW-TEMPERATURE LPE TECHNIQUE FOR THE PERFORMANCE OF VISIBLE ALGAAS (SC) LASERS
DIAZ, P
PRUTSKIJ, TA
LOPEZ, F
CRYSTAL RESEARCH AND TECHNOLOGY, 1990, 25 (12) : 1419 - 1424
[40] GROWTH OF THIN (AIGA)AS LAYERS BY LPE
ETTENBERG, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : C134 - C134

← 1 2 3 4 5 →