A Comparative Study Of Dopant Activation And Deactivation In Arsenic and Phosphorus Implanted Silicon

被引：0
|
作者：
Qin, S. [1 ]
McTeer, Allen [1 ]
Hu, Jeff Y. [1 ]
Prussin, S. [2 ]
Reyes, Jason [2 ]
机构：
[1] Micron Technol Inc, Boise, ID 83707 USA
[2] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
来源：
ION IMPLANTATION TECHNOLOGY 2010 | 2010年 / 1321卷
关键词：
Differential Hall Effect; mobility; arsenic and phosphorus implantation; mobility scattering defects;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Comparative As and P beamline implantations were subjected to a series of low, high, low, high anneals and evaluated after each step. Following high temperature anneals, there is an increase in carrier concentration, a decrease in mobility, and an increase in the concentration of mobility scattering defects.
引用
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页码：188 / +
页数：2
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