Electrical properties of gold at dislocations in silicon

被引：5

作者：

Voss, O ^{[1
]}

Kveder, VV ^{[1
]}

Schröter, W ^{[1
]}

Seibt, M ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-37077 Gottingen, Germany

来源：

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 6 | 2005年 / 2卷 / 06期

关键词：

D O I：

10.1002/pssc.200460516

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Deep level transient spectrocsopy has been used to study deep levels in plastically deformed n-type silicon introduced by gold impurities at concentrations differing by about one order of magnitude. A DLTS- line is observed which shows the signatures of extended localized states and emission characteristics close to that of the gold acceptor level in dislocation-free silicon. It is attributed to gold accumulated in the strain-field of dislocations. The amplitude of the C-line typically found in plastically deformed silicon shows no correlation with the gold concentration. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1847 / 1851

页数：5

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