Structural and electrical characteristics of RF magnetron sputtered ZnO films

被引：48
|
作者：
Kang, DJ
Kim, JS
Jeong, SW
Roh, Y
Jeong, SH
Boo, JH
机构：
[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 440746, South Korea
[2] Sungkyunkwan Univ, Dept Chem, Suwon 440746, South Korea
来源：
THIN SOLID FILMS | 2005年 / 475卷 / 1-2期
关键词：
ZnO thin films; c-axis orientation; FBAR;
D O I：
10.1016/j.tsf.2004.07.029
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effects of both bottom electrodes and processing parameters on the physical and electrical properties of ZnO films deposited by R.F. magnetron sputtering. We found that the preferential c-axis growth of deposited ZnO films depends on the type of bottom electrode: Both Al and An bottom electrodes enhance the growth of c-axis orientation in ZnO films, while no clear evidence for any preferential growth was observed in case of Cu and Si. The resistivity of ZnO films deposited on Au and Al bottom electrodes was Greater than 10(6) Omega cm. The ranges of dielectric constant of Al/ZnO and Au/ZnO samples were 8-14 and 13-16, respectively. Dissipation factors change from 0.02 to 0.05. In general, as c-axis orientation enhances, dielectric constant and dissipation factor increase and decrease, respectively. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：160 / 165
页数：6
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