Cubic GaN film growth using AlN/GaN ordered alloy by RF plasma-assisted molecular beam epitaxy

被引:0
|
作者
Shigemori, A [1 ]
Shike, J [1 ]
Takahashi, K [1 ]
Ishida, K [1 ]
Kimura, R [1 ]
机构
[1] Teikyo Univ Sci & Technol, Uenohara, Yamanashi, Japan
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暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Cubic GaN films were grown on GaAs (100) using a newly introduced A1N/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations, photoluminescence (14 K) and X-ray diffraction measurements.
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页码:170 / 174
页数:5
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