Cubic GaN film growth using AlN/GaN ordered alloy by RF plasma-assisted molecular beam epitaxy

被引：0

作者：

Shigemori, A ^{[1
]}

Shike, J ^{[1
]}

Takahashi, K ^{[1
]}

Ishida, K ^{[1
]}

Kimura, R ^{[1
]}

机构：

[1] Teikyo Univ Sci & Technol, Uenohara, Yamanashi, Japan

来源：

INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Cubic GaN films were grown on GaAs (100) using a newly introduced A1N/GaN ordered alloy fabricated by plasma-assisted molecular beam epitaxy. Dominant cubic GaN growth was confirmed by in situ reflection high-energy electron diffraction observations, photoluminescence (14 K) and X-ray diffraction measurements.

引用

页码：170 / 174

页数：5

共 50 条

[1] Improvement of cubic GaN film crystal quality by use of an AlN/GaN ordered alloy on GaAs (100) by plasma assisted molecular beam epitaxy
Kimura, R
Shigemori, A
Shike, J
Ishida, K
Takahashi, K
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 455 - 459
[2] Observation of cubic GaN/AlN heterointerface formation by RHEED in plasma-assisted molecular beam epitaxy
Okumura, H
Koizumi, T
Ishida, Y
Cho, SH
Shen, XQ
Yoshida, S
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1545 - 1548
[3] Epitaxial growth of AlN and GaN on Si(111) by plasma-assisted molecular beam epitaxy
Schenk, HPD
Kipshidze, GD
Lebedev, VB
Shokhovets, S
Goldhahn, R
Kräusslich, J
Fissel, A
Richter, W
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 359 - 364
[4] Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy
Corrion, A
Wu, F
Mates, T
Gallinat, CS
Poblenz, C
Speck, JS
JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) : 587 - 595
[5] Effects of RF plasma parameters on the growth of InGaN GaN heterostructures using plasma-assisted molecular beam epitaxy
Shim, KH
Paek, MC
Kim, KH
Hong, SU
Cho, KI
Lee, HG
Kim, J
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S350 - S354
[6] Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates
Storm, D. F.
Deen, D. A.
Katzer, D. S.
Meyer, D. J.
Binari, S. C.
Gougousi, T.
Paskova, T.
Preble, E. A.
Evans, K. R.
Smith, David J.
JOURNAL OF CRYSTAL GROWTH, 2013, 380 : 14 - 17
[7] Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy
Schenk, H.P.D.
Kipshidze, G.D.
Lebedev, V.B.
Shokhovets, S.
Goldhahn, R.
Kräulich, J.
Fissel, A.
Richter, Wo.
Journal of Crystal Growth, 1999, 201 : 359 - 364
[8] Growth and characterization of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy
Shim, KH
Hong, SE
Kim, KH
Paek, MC
Cho, KI
WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 383 - 388
[9] Growth optimisation of the GaN layers and GaN/AlGaN heterojunctions on bulk GaN substrates using plasma-assisted molecular beam epitaxy
Skierbiszewski, C
Wasilewski, Z
Siekacz, M
Feduniewicz, A
Pastuszka, B
Grzegory, I
Leszczynski, M
Porowski, S
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (02): : 320 - 323
[10] Electrical characterization at cubic AlN/GaN heterointerface grown by radio-frequency plasma-assisted molecular beam epitaxy
Kitamura, T
Ishida, Y
Shen, XQ
Nakanishi, H
Chichibu, SF
Shimizu, M
Okumura, H
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2001, 228 (02): : 599 - 602

← 1 2 3 4 5 →