Recent Trends of Patents on Front TCOs for Highly Efficient Thin-Film Si Photovoltaic Devices

被引:4
|
作者
Myong, Seung Y. [1 ]
机构
[1] KISCO, Energy R&D Ctr, Jeungpyeong 368906, Choongcheongbuk, South Korea
关键词
Anti-reflection; light trapping; surface morphology; schottky barrier reduction; TCO; thin-film Si photovoltaic device; SILICON SOLAR-CELLS; CHEMICAL-VAPOR-DEPOSITION; INTERFACE MORPHOLOGIES; ZINC-OXIDE; ZNO LAYERS; TRANSPARENT; ELECTRODES; FABRICATION; TEXTURES; MOCVD;
D O I
10.2174/1872210508666141022113459
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The recent trends of US patents on the front transparent electrode of thin-film silicon (Si) photovoltaic (PV)devices are reviewed. The various transparent conductive oxide (TCO) materials have been invented to satisfy a multifunctional prerequisite for the front electrode: high electrical conductivity, high optical transparency, effective light trapping, anti-reflection effect, and diffusion barrier. The recent surge of filed patents reflects the great importance of the front TCO technology for high efficiency thin-film Si PV devices. Among the TCO materials, properties of commercially available F-doped tin oxide (SnO2:F)-coated glass substrates are compared. SnO2:F-coated glass substrates share 20-30% of the cost for production of thin-film Si PV modules - evaluated values from mass production at KISCO. Therefore, the cost and technological innovation must be established for cost-effective mass production of large-area thin-film Si multi-junction PV modules.
引用
收藏
页码:165 / 180
页数:16
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