Liquid Crystal Alignment on Thin Organic Films Deposited in a Low Pressure Plasma Enhanced CVD Reactor

被引:0
|
作者
Baitukha, Alibi [1 ]
Mori, Shinsuke [1 ]
Suzuki, Masaaki [1 ]
机构
[1] Tokyo Inst Technol, Dept Chem Engn, Meguro Ku, Tokyo 1528552, Japan
关键词
alignment layer; ion bombardment; plasma enhanced chemical vapor deposition (PECVD); plasma treatment; ATOMIC-BEAM ALIGNMENT; C-H FILMS; ATMOSPHERIC-PRESSURE; ION-BEAM; POLYIMIDE FILMS; SURFACE; MICROSTRUCTURE; IRRADIATION; PLANAR; LIGHT;
D O I
10.1002/ppap.201400079
中图分类号
O59 [应用物理学];
学科分类号
摘要
The application of a low pressure plasma enhanced chemical vapor deposition (PECVD) system is considered for the deposition of thin carbon films with alignment properties for liquid crystals (LC). The original electrode configuration induces directional planar alignment properties on deposited films, and makes possible to fabricate alignment layer in a one step process. To evaluate the LC alignment properties LC cells are assembled from substrates with deposited carbon films and observed in a polarizing optical microscope. Directional ion bombardment induced by the electrode configuration is considered to be the cause of the observed LC molecules alignment. The simultaneous deposition and ion bombardment processes induce a favorable condition for depositing carbon films with anisotropic properties.
引用
收藏
页码:450 / 455
页数:6
相关论文
共 50 条
  • [1] LIQUID-CRYSTAL ALIGNMENT PRODUCED BY RF PLASMA DEPOSITED FILMS
    SPROKEL, GJ
    GIBSON, RM
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (04) : 557 - 561
  • [2] Characterization of silicon nitride thin films deposited by reactive sputtering and plasma-enhanced CVD at low temperatures
    Takeyama, Mayumi B.
    Sato, Masaru
    Nakata, Yoshihiro
    Kobayashi, Yasushi
    Nakamura, Tomoji
    Noya, Atsushi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (05)
  • [3] THIN CERAMIC LAYERS DEPOSITED BY PLASMA ENHANCED CVD
    CROS, B
    GAT, E
    DURAND, J
    COT, L
    JOURNAL DE PHYSIQUE III, 1993, 3 (04): : 729 - 744
  • [4] Plasma enhanced CVD of low dielectric constant plasma polymerized decahydronaphthalene thin films
    Yang, Y
    Shim, C
    Jung, D
    CHEMICAL VAPOR DEPOSITION, 2002, 8 (01) : 35 - 37
  • [5] PROPERTIES OF BN THIN-FILMS DEPOSITED BY PLASMA CVD
    CHAYAHARA, A
    YOKOYAMA, H
    IMURA, T
    OSAKA, Y
    FUJISAWA, M
    APPLIED SURFACE SCIENCE, 1988, 33-4 : 561 - 566
  • [6] THIN-FILM PREPARATION BY PLASMA AND LOW-PRESSURE CVD IN A HORIZONTAL REACTOR
    MOROSANU, CE
    SOLTUZ, V
    VACUUM, 1981, 31 (07) : 309 - 313
  • [7] Organosilicon thin films deposited by plasma enhanced CVD:: Thermal changes of chemical structure and mechanical properties
    Zajickova, L.
    Bursikova, V.
    Kucerova, Z.
    Franclova, J.
    Siahel, P.
    Perina, V.
    Mackova, A.
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) : 1255 - 1259
  • [8] The role of pressure on thin amorphous carbon films deposited using microwave surface wave plasma CVD
    Ghimire, Dilip Chandra
    Adhikari, Sudip
    Uchida, Hideo
    Umeno, Masayoshi
    DIAMOND AND RELATED MATERIALS, 2006, 15 (11-12) : 1792 - 1794
  • [9] THIN TUNGSTEN FILMS BY LOW-PRESSURE CVD
    MILLER, NE
    HERRING, RB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (03) : C103 - C103
  • [10] Plasma enhanced CVD of fluorocarbon films by low-pressure dielectric barrier discharge
    Liu, Dongping
    Li, Wei
    Feng, Zhiqing
    Tan, Xiaodong
    Chen, Baoxiang
    Niu, Jinhai
    Liu, Yanhong
    SURFACE & COATINGS TECHNOLOGY, 2009, 203 (09): : 1231 - 1236