Light-emitting diodes based on molecularly thin films of a conjugated polymer have been fabricated. A few Langmuir-Blodgett layers of poly(3-hexylthiophene) have been used as the active emitting material of the devices Even the thinnest devices with only 3 monolayers, each having a thickness of approximate to 3 nm, yield the same luminance as thicker ones. The emission results from excitons in the polymer chains, and has a spectrum similar to that of photoluminescence, with a maximum at about 2.0 eV. (C) 1996 American Institute of Physics.
机构:
Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, JapanNagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
Aoki, A
Maeda, S
论文数: 0引用数: 0
h-index: 0
机构:Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
Maeda, S
Kawai, Y
论文数: 0引用数: 0
h-index: 0
机构:Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
Kawai, Y
Tanaka, T
论文数: 0引用数: 0
h-index: 0
机构:Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
Tanaka, T
Miyashita, T
论文数: 0引用数: 0
h-index: 0
机构:Nagoya Inst Technol, Grad Sch Engn, Showa Ku, Nagoya, Aichi 4668555, Japan
机构:
Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, IndiaIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India
Chowdhury, A
Pal, AJ
论文数: 0引用数: 0
h-index: 0
机构:
Indian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, IndiaIndian Assoc Cultivat Sci, Dept Solid State Phys, Kolkata 700032, W Bengal, India