Co-doping of Al and Bi to control the transport properties for improving thermoelectric performance of Mg2Si

被引:18
|
作者
Kim, Gwansik [1 ]
Kim, Jeongmin [1 ]
Lee, Hwijong [1 ]
Cho, Sungmee [1 ]
Lyo, Inwoong [2 ]
Noh, Sujung [2 ]
Kim, Byung-Wook [2 ]
Kim, Sung Wng [3 ]
Lee, Kyu Hyoung [4 ]
Lee, Wooyoung [1 ]
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Hyundai Motor Co, Cent Adv Res & Engn Inst, Adv Mat Res Team, Uiwang 437718, South Korea
[3] Sungkyunkwan Univ, Dept Energy Sci, Suwon 440746, South Korea
[4] Kangwon Natl Univ, Dept Nano Appl Engn, Chunchon 200701, South Korea
基金
新加坡国家研究基金会;
关键词
Thermoelectric properties; Magnesium silicide; SPS; Solid state reaction; SOLID-STATE SYNTHESIS; FIGURE; MERIT;
D O I
10.1016/j.scriptamat.2016.01.027
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We investigated the thermoelectric properties of Al and Bi co-doped Mg2Si polycrystalline bulks fabricated using a solid state reaction combined with the spark plasma sintering technique. Through controlled doping of Al and Bi, the power factor could be enhanced due to an increase in the Seebeck coefficient benefiting from an enhancement of the density of states effective mass. The lattice thermal conductivity was reduced due to intensified point-defect phonon scattering originating from the mass difference between the host Si atoms and Bi dopants. By these synergetic effects, the dimensionless figure of merit (ZT) of 1.02 was obtained at 873 K. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:11 / 15
页数:5
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