Reduction of leakage current by O2 plasma treatment for device isolation of AlGaN/GaN heterojunction field-effect transistors

被引：18
|
作者：
Jiang, Ying [1 ,2 ]
Wang, Qingpeng [1 ,2 ]
Zhang, Fuzhe [2 ]
Li, Liuan [2 ]
Zhou, Deqiu [3 ]
Liu, Yang [3 ]
Wang, Dejun [1 ]
Ao, Jin-Ping [2 ]
机构：
[1] Dalian Univ Technol, Sch Elect Sci & Technol, Fac Elect Informat & Elect Engn, Dalian 116024, Peoples R China
[2] Univ Tokushima, Inst Sci & Technol, Tokushima 7708506, Japan
[3] Sun Yat Sen Univ, Sch Phys & Engn, Guangzhou 510275, Guangdong, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2015年 / 351卷
关键词：
GaN; AlGaN/GaN HFET; Mesa isolation; O-2 plasma treatment; Leakage current; ION-INDUCED NITRIDATION; YELLOW LUMINESCENCE; GAN; GALLIUM; SURFACE; FILMS; PHOTOLUMINESCENCE; TEMPERATURE; OXIDATION; NITROGEN;
D O I：
10.1016/j.apsusc.2015.06.092
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The influence of O-2 plasma treatment on the mesa-isolated region of AlGaN/GaN heterojunction field-effect transistors (HFETs) was studied. The etched surface of the undoped GaN layer was exposed to O-2 plasma generated by a plasma-enhanced chemical vapor deposition system. The current-voltage characteristics indicated that the current of the mesa-isolated region was strongly dependent on the treatment temperature. Treatment with O-2 plasma at 300 degrees C and 250W for 15 min was confirmed to be the optimal condition, under which isolation current was reduced by four orders of magnitude and photovoltaic response was suppressed. The photoluminescence spectrum showed a decrease in the density of defects related to the yellow luminescence band and the occurrence of defects related to the blue luminescence band. X-ray photoelectron spectroscopy results showed the formation of Ga2O3 and a possible defect of substitutional oxygen on the nitrogen site O-N. AlGaN/GaN HFETs with an on/off drain current ratio of 1.73 x 10(7) were obtained, and the breakdown voltage of the mesa-isolated region increased from 171.5 to 467.2 V. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：1155 / 1160
页数：6
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