Strained multiple quantum well lasers grown on GaSb emitting between 2 and 2.4 mu m

被引：12
|
作者：
Baranov, AN
Cuminal, Y
Bertru, N
Alibert, C
Joullie, G
机构：
来源：
INTEGRATED OPTICS DEVICES: POTENTIAL FOR COMMERCIALIZATION | 1997年 / 2997卷
关键词：
D O I：
10.1117/12.264141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low threshold lasers based on GaInSbAs/GaSb type-II QW structures operating between 2 and 2.4 mu m at room temperature have been fabricated. The RT threshold current density as low as 305 A/cm(2) was obtained for a 900-mu m-long laser emitting at 2.36 mu m. High efficiency of indirect radiative recombination is explained by accumulation of holes in potential wells situated in barrier layers near the QW interfaces.
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页码：2 / 13
页数：12
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