Electrodeposition of CuGaSe2 from Thiocyanate-Containing Electrolytes

被引:6
|
作者
Muthuraj, Josiah Jebaraj J. [1 ]
Rasmussen, Don H. [1 ,2 ]
Suni, Ian I. [1 ,2 ]
机构
[1] Clarkson Univ, Dept Chem & Biomol Engn, Potsdam, NY 13699 USA
[2] Clarkson Univ, Mat Sci & Engn PhD Program, Potsdam, NY 13699 USA
关键词
CUINSE2; THIN-FILMS; SINGLE-BATH; SOLAR-CELLS;
D O I
10.1149/1.3519997
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
We report electrodeposition of CuGaSe2 from electrolytes that contain thiocyanate (SCN-) as a complexing agent to cathodically shift the reduction potential of Cu(II). In the presence of thiocyanate, the peak reduction currents for Cu(II) and Ga(III) during cyclic voltammetry occur at potentials that differ by only 80 mV, even though the standard reduction potentials of the uncomplexed species differ by about 870 mV. Stoichiometric CuGaSe2 deposits are obtained by the induced codeposition mechanism at -300 mV vs SCE and pH 2.75 from electrolytes with Cu: Ga ratios ranging from 0.5 to 1.5. The stoichiometry is controlled by the thermodynamic driving force associated with stable compound formation, as illustrated by the anodically shifted reduction peak obtained in cyclic voltammograms of electrolytes containing all three elemental species. Oxygen incorporation into the electrodeposit is observed, because electrodeposition of stoichiometric CuGaSe2 appears to be immediately followed by Ga oxidation. Methods for removing oxygen from the electrodeposited film are discussed. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3519997] All rights reserved.
引用
收藏
页码:D54 / D56
页数:3
相关论文
共 50 条
  • [21] THERMAL-EXPANSION OF CUGASE2
    BRUHL, HG
    NEUMANN, H
    KUHN, G
    SOLID STATE COMMUNICATIONS, 1980, 34 (04) : 225 - 227
  • [22] RAMAN-SCATTERING IN CUGASE2
    BODNAR, IV
    GOLUBEV, LV
    PLOTNICHENKO, VG
    SMOLYANINOVA, EA
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (02): : K111 - K114
  • [23] Cyclic voltammetry study of electrodeposition of CuGaSe2 thin films on ITO-glass substrates
    Lee, Hyunju
    Lee, Jae-Ho
    Hwang, Yoon-Hwae
    Kim, Yangdo
    CURRENT APPLIED PHYSICS, 2014, 14 (01) : 18 - 22
  • [24] Hole transport mechanisms in CuGaSe2
    Siebentritt, S
    THIN SOLID FILMS, 2005, 480 : 312 - 317
  • [25] MOVPE of CuGaSe2 for photovoltaic applications
    Kampschulte, T
    Bauknecht, A
    Blieske, U
    Saad, M
    Chichibu, S
    Lux-Steiner, MC
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 391 - 394
  • [26] Polarized luminescence of defects in CuGaSe2
    Siebentritt, Susanne
    Augustin, Sven
    Papathanasiou, Niklas
    Hebert, Damon
    Rockett, Angus
    Blaesing, Juergen
    Lux-Steiner, Martha Ch
    THIN-FILM COMPOUND SEMICONDUCTOR PHOTOVOLTAICS - 2007, 2007, 1012 : 483 - +
  • [27] Surface structure of CuGaSe2 (001)
    Deniozou, T
    Esser, N
    Siebentritt, S
    Vogt, P
    Hunger, R
    THIN SOLID FILMS, 2005, 480 : 382 - 387
  • [28] Cationic point defects in CuGaSe2 from a structural perspective
    Stephan, C.
    Scherb, T.
    Kaufmann, C. A.
    Schorr, S.
    Schock, H. -W.
    APPLIED PHYSICS LETTERS, 2012, 101 (10)
  • [29] Pulling of bulk CuGaSe2 crystals from indium solution
    Tanaka, A
    Aikawa, K
    Katsuno, H
    Kimura, M
    Sukegawa, T
    JOURNAL OF CRYSTAL GROWTH, 1997, 178 (03) : 350 - 354
  • [30] Preparation of CuGaSe2 solar cells and their optimization
    Nishiwaki, S
    Dziedzina, M
    Schuler, S
    Siebentritt, S
    Bär, M
    Rumberg, A
    Rusu, M
    Klenk, R
    Lux-Steiner, MC
    PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 471 - 474