Multiple subband population in delta-doped AlAsSb/InGaAs heterostructures

被引：7

作者：

Ahoujja, M

Elhamri, S

Newrock, RS

Mast, DB

Mitchel, WC

Lo, I

Fathimulla, A

机构：

[1] USAF,WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433

[2] NATL SUN YAT SEN UNIV,DEPT PHYS,KAOHSIUNG 80424,TAIWAN

[3] ALLIED SIGNAL AEROSP CO,MICROELECT & TECHNOL CTR,COLUMBIA,MD 21405

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 03期

关键词：

D O I：

10.1063/1.363896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have measured the Shubnikov-de Haas (SdH) effect in delta-doped AlAs0.56Sb0.44/In0.53Ga0.47As heterostructures and observed a population of the second subband. Using the persistent photoconductivity effect we increased the electron density from 26.73 to 28.20x10(11) cm(-2) in the first subband and 6.61 to 7.20X10(11) cm(-2) in the second. The onset of the second subband population occurs when the first subband is filled to a density of 11.56x10(11) cm(-2). From the nonparabolic band approximation we calculated the effective masses in both subbands before illumination. The effective mass for the second subband was evaluated using the temperature dependence of the SdH amplitude. Its value agrees well with the values obtained from the k . p approximation and infrared cyclotron resonance measurements. (C) 1997 American Institute of Physics.

引用

页码：1609 / 1611

页数：3

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