Study of the growth of biaxially textured CeO2 films during ion-beam-assisted deposition

Biaxially textured CeO2 films were deposited on Hastelloy C276 substrates at room temperature using ion-beam-assisted e-beam evaporation with the ion beam directed at 55 degrees to the normal of the film plane. The crystalline structure and in-plane orientation of films were investigated by x-ray diffraction 2 theta-scan and phi-scan. The orientation of the films was studied as a function of ion-to-atom ratio and film thickness. The ion-to-atom ratio was varied by independently adjusting the deposition rate and the ion current density. Under optimum condition, (200) textured CeO2 films have been successfully grown on Hastelloy C276.