Control of carrier concentration in Bi-2212

被引:7
|
作者
Yamashita, S. [1 ]
Kasai, T. [1 ]
Fujii, T. [2 ]
Watanabe, T. [3 ]
Matsuda, A. [1 ,4 ]
机构
[1] Waseda Univ, Dept Phys, Shinjuku Ku, Tokyo 1698555, Japan
[2] Univ Tokyo, Cryogen Res Ctr, Bunkyo Ku, Tokyo 1130032, Japan
[3] Hirosaki Univ, Dept Adv Phys, Aomori 0368561, Japan
[4] NTT Basic Res Labs, Atsugi, Kanagawa 24301, Japan
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2010年 / 470卷
关键词
Superconductor; Bi-2212; STM; Underdoped;
D O I
10.1016/j.physc.2009.11.065
中图分类号
O59 [应用物理学];
学科分类号
摘要
We realized highly underdoped Bi-2212 crystals by using a Bi substitution into a Sr site (x), together with the excess oxygen (delta) control. The samples with x = 0-0.3 were grown by a traveling solvent floating zone method. For each x, delta was varied using the precision annealing method [1]. Under several assumptions, the effective Bi valence was evaluated to be +2.2, which is much lower than the formal valence +3. This indicates that the Bi substitution accompanies additional uptake in excess oxygen. The x dependent delta-doping level p relation and the observed shrink in the c-axis length are consistent with this assumption. Based on the decomposition phase diagram obtained in this study, T(c) of 22 K was realized by careful annealing treatments. The samples showed a superconducting volume fraction of over 50%. (C) 2009 Published by Elsevier B.V.
引用
收藏
页码:S170 / S172
页数:3
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