Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation

被引：12

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
,2
]}

Miritello, M. ^{[2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] CNR, MATIS IMM, I-95123 Catania, Italy

[3] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

PHASE-CHANGE MATERIALS; THIN-FILMS; RESISTANCE MEASUREMENTS; TRANSITION; MEMORY;

D O I：

10.1149/1.3527941

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amorphous to crystal transition temperature has been measured in capped (10 nm SiO2) and uncapped Ge2Sb2Te5 (GST) films (20 nm thick) after irradiation with a 40 keV Ge+ in the range between 5 x 10(13) and 1 x 10(15) ions/cm(2). In the capped samples the crystallization temperature increases with fluence (15 degrees C at 1 x 10(15) ions/cm(2)). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527941] All rights reserved.

引用

页码：H124 / H127

页数：4

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