Tuning the Crystallization Temperature of Amorphous Ge2Sb2Te5 by O and Si Recoil Implantation

被引：12

作者：

Carria, E. ^{[1
,2
]}

Mio, A. M. ^{[1
]}

Gibilisco, S. ^{[1
,2
]}

Miritello, M. ^{[2
]}

Grimaldi, M. G. ^{[1
,2
]}

Rimini, E. ^{[1
,3
]}

机构：

[1] Univ Catania, Dipartimento Fis & Astron, I-95123 Catania, Italy

[2] CNR, MATIS IMM, I-95123 Catania, Italy

[3] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2011年 / 14卷 / 03期

关键词：

PHASE-CHANGE MATERIALS; THIN-FILMS; RESISTANCE MEASUREMENTS; TRANSITION; MEMORY;

D O I：

10.1149/1.3527941

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The amorphous to crystal transition temperature has been measured in capped (10 nm SiO2) and uncapped Ge2Sb2Te5 (GST) films (20 nm thick) after irradiation with a 40 keV Ge+ in the range between 5 x 10(13) and 1 x 10(15) ions/cm(2). In the capped samples the crystallization temperature increases with fluence (15 degrees C at 1 x 10(15) ions/cm(2)). This effect is due to the doping of the GST layer with a few atom percent of recoiled O and Si atoms. The influence of the chemical species on the crystallization kinetics overcomes the effect of the ion-induced local rearrangement that instead decreases the transition temperature by a few degrees in the uncapped samples. Recoil implantation through the use of a thin capping layer may then be a viable alternative to the direct doping of chalcogenide thin films. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3527941] All rights reserved.

引用

页码：H124 / H127

页数：4

共 50 条

[1] Crystallization process in Ge2Sb2Te5 amorphous films
Morales-Sanchez, E.
Lain, B.
Prokhorov, E.
Hernandez-Landaverde, M. A.
Trapaga, G.
Gonzalez-Hernandez, J.
VACUUM, 2010, 84 (07) : 877 - 881
[2] Mechanisms of fast crystallization in amorphous Ge2Sb2Te5 films
Tanaka, Keiji
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (06)
[3] Laser induced crystallization of amorphous Ge2Sb2Te5 films
Weidenhof, V
Friedrich, I
Ziegler, S
Wuttig, M
JOURNAL OF APPLIED PHYSICS, 2001, 89 (06) : 3168 - 3176
[4] Pressure-induced crystallization of amorphous Ge2Sb2Te5
Xu, M.
Meng, Y.
Cheng, Y. Q.
Sheng, H. W.
Han, X. D.
Ma, E.
JOURNAL OF APPLIED PHYSICS, 2010, 108 (08)
[5] Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film
Lee, Po-Hsiang
Chang, Po-Chin
Chao, Der-Sheng
Liang, Jenq-Horng
Chang, Shih-Chin
Tsai, Ming-Jinn
Chin, Tsung-Shune
THIN SOLID FILMS, 2012, 520 (21) : 6636 - 6641
[6] Study of crystallization in Ge2Sb2Te5
Hu, D. Z.
Xue, R. S.
Zhu, J. S.
INTEGRATED FERROELECTRICS, 2008, 96 : 153 - 159
[7] Study on the crystallization behavior of Ge2Sb2Te5 and silicon doped Ge2Sb2Te5 films
Jiang, Yifan
Xu, Ling
Chen, Jing
Zhang, Rui
Su, Weining
Yu, Yao
Ma, Zhongyuan
Xu, Jun
ADVANCED ENGINEERING MATERIALS III, PTS 1-3, 2013, 750-752 : 1044 - +
[8] Raman Study on the Crystallization Characteristics of Amorphous Ge2Sb2Te5 Film
Zhu, Z.
Liu, F. R.
Huang, Y. N.
ENGINEERING AND MANUFACTURING TECHNOLOGIES, 2014, 541-542 : 229 - 233
[9] Crystallization of amorphous Ge2Sb2Te5 films induced by an ultraviolet laser
Zhou, W. P.
Liu, F. R.
Bai, N.
Wan, Y. H.
Lin, X.
Chen, J. M.
APPLIED SURFACE SCIENCE, 2013, 285 : 97 - 101
[10] Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te5
Ielmini, D.
Lavizzari, S.
Sharma, D.
Lacaita, A. L.
APPLIED PHYSICS LETTERS, 2008, 92 (19)

← 1 2 3 4 5 →