A HIGH LINEARITY READOUT INTEGRATED CIRCUIT FOR UNCOOLED IR DETECTOR

被引：0

作者：

Liu, Chang ^{[1
]}

Wang, Kai ^{[1
]}

Luo, Mingcheng ^{[1
]}

Guo, Yaozu ^{[1
]}

Yan, Feng ^{[1
]}

Ji, Xiaoli ^{[1
]}

机构：

[1] Nanjing Univ, Inst Elect Sci & Engn, Nanjing, Jiangsu, Peoples R China

来源：

2020 CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2020 (CSTIC 2020) | 2020年

基金：

国家重点研发计划;

关键词：

D O I：

10.1109/cstic49141.2020.9282588

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we presented a CMOS microbolometer design integrated with a linearity readout circuit using 0.18 mu m CMOS process. The air-bridge microbolometer was designed with polycrystalline silicon film while a capacitive trans-impedance amplifier (CTIA) was used for detecting the weak current from IR sensors. Simulation results shows that the noise equivalent power of detector is about 1nW and the static power consumption is 163 mu W for CTIA with a small area of 30x40 mu m(2).

引用

页数：3

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