Monolithic thin-film piezoelectric-on-substrate filters

被引:13
|
作者
Abdolvand, Reza [1 ]
Ayazi, Farrokh [1 ]
机构
[1] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
关键词
thin-film piezoelectric; monolithic filter; channel-select filters; filter Q;
D O I
10.1109/MWSYM.2007.380519
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents monolithic piezoelectric-on-substrate acoustic filters operating in a wide frequency range. Second order narrowband filters are realized by utilizing coupled resonance modes of a single microstructure. The substrate is selected from materials with high acoustic velocity and low acoustic loss (e.g. silicon) resulting in high Q resonant structures. The unique mechanical coupling technique employed in this work enables fabrication of narrow-band filters with a high out-of-band rejection in a small footprint. We demonstrate narrow-band filters suitable for channel-select applications in IF and RF bands. Filter Q values of 800 at 250MHz., 470 at 360MHz, and 400 at 3.5GHz for small footprint second-order filters are reported. The measured power handling of these devices is high due to the use of high energy density structural material, showing a 0.2dB compression point of >15dBm at 360MHz (limited by the measurement equipment).
引用
收藏
页码:509 / 512
页数:4
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