Comparison of GaInN laser structures grown on different substrates

被引：4

作者：

Draeger, A. ^{[1
]}

Fuhrmann, D. ^{[1
]}

Netzel, C. ^{[1
]}

Rossow, U. ^{[1
]}

Schenk, H. P. D. ^{[2
]}

Hangleiter, A. ^{[1
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Appl Phys, Mendelssohnstr 2, D-38106 Braunschweig, Germany

[2] CNRS, CRHEA, F-06560 Valbonne, France

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期

关键词：

OPTICAL GAIN; DIODES;

D O I：

10.1002/pssc.200778684

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In order to get a better understanding of the influence of different substrates on GaInN laser structures we performed optical gain spectroscopy using the Variable Stripe Length Technique on laser samples grown by MOVPE. These samples were grown on SiC, GaN template on sapphire and on freestanding GaN substrates. Using the measurements on these samples the influence of the substrate on the gain performance and on the recombination processes in the samples is determined. The main focus of the studies are the measurements made on samples grown on different substrates during the same growth-process and in addition to reach an emitting wavelength longer than 450 nm. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2277 / +

页数：2

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