Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

被引：8
|
作者：
Son, Hyo-Soo [1 ]
Choi, Nak-Jung [1 ]
Kim, Kyoung-Bo [2 ]
Kim, Moojin [3 ]
Lee, Sung-Nam [1 ]
机构：
[1] Korea Polytech Univ, Dept Nanoopt Engn, Shihung 429793, South Korea
[2] Inha Tech Coll, Dept Met & Mat Engn, Inchon 402752, South Korea
[3] Jungwon Univ, Dept Renewable Energy, Goesan Gun 367805, Chungbuk, South Korea
来源：
MATERIALS RESEARCH BULLETIN | 2016年 / 82卷
基金：
新加坡国家研究基金会;
关键词：
Oxide; Nanostructures; Crystal growth; Atomic force microscopy; X-ray diffraction; THIN-FILM TRANSISTORS; OPTICAL-PROPERTIES; CATALYTIC GROWTH; NANOWIRE ARRAYS; VAPOR TRANSPORT;
D O I：
10.1016/j.materresbull.2016.02.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray-diffraction measurements, the crystallographic plane of ZnO NRs grown on (10 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 01]to [0 01]. With increasing Al content of the nonpolar (10 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (101) ZnO NRs to polar (0 01) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：50 / 54
页数：5
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