Analysis of Trapping Effect in GaN HEMT Modeling

被引：0

作者：

Qian, Weiqiang ^{[1
]}

Khan, Mehdi ^{[1
]}

Huang, Dong ^{[1
]}

Lin, Fujiang ^{[1
]}

机构：

[1] USTC, Dept Elect Sci & Technol, Hefei 230027, Peoples R China

来源：

2015 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS (IMWS-AMP) | 2015年

关键词：

GaN; HEMT; Trapping effect; Drain-lag; LAG;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the large-signal modeling of the trapping effect in GaN HEMT device. Trapping effect leads to strong dispersion from pulsed I-V down to dc scales in GaN device modeling. The trapping mechanism is analyzed in detail. Several published methods have been introduced, to deal with large-signal modeling. A modified Angelov model with drain-lag subcircuit is proposed. This model can reproduce the asymmetrical behavior of traps which include capture and emission processes. It can predict pulse I-V and DC measurement. Comparison results between the measured and modeled I-V data are presented, which demonstrates accurately in different bias condition.

引用

页码：68 / 70

页数：3

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