IMPLEMENTING THE DESIGN OF MAGNETIC FLIP-FLOP BASED ON SWAPPED MOS DESIGN

被引:0
|
作者
Gangalakshmi, S. [1 ]
Banu, A. Khathija [2 ]
Kumar, R. Harish [3 ]
机构
[1] NPRCET, VLSI Design, Dindigul, Tamil Nadu, India
[2] NPRCET, ECE, Dindigul, Tamil Nadu, India
[3] Karpagam Coll Engn, ECE, Coimbatore, Tamil Nadu, India
关键词
Magnetic flip-flop; STT-MRAM; Swapped MOS design; LEAKAGE CURRENT; POWER; ARCHITECTURE; CIRCUIT; MEMORY; MRAM;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Flip-flops are used as data storage elements for storing its states. Non-volatile may retain stored information even without power. In this proposed, a power-efficient Magnetic Flip-flop design architecture is implemented to reduce high write energy which required at the time of computing purpose and reduces leakage power. The design is based on multi-threshold swapped MOS design using CMOS technology which reduces writing energy and time. The CMOS technology provides less noise ratio during the design. Thus the proposed method achieves lower power consumption and reduced writing energy and its time.
引用
收藏
页码:987 / 989
页数:3
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