4H-SiC Avalanche Photodiodes for 280 nm UV Detection

被引：0

作者：

Cha, Ho-Young ^{[1
]}

Sung, Hyuk-Kee ^{[1
]}

Kim, Hyungtak ^{[1
]}

Cho, Chun-Hyung ^{[2
]}

Sandvik, Peter M. ^{[3
]}

机构：

[1] Hongik Univ, Seoul 121791, South Korea

[2] Hongik Univ, Yeongi Gun 339701, South Korea

[3] GE Global Res, Niskayuna, NY 12309 USA

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2010年 / E93C卷 / 05期

关键词：

avalanche photodiode; silicon carbide; UV detection; NEAR-SURFACE; JUNCTIONS;

D O I：

10.1587/transele.E93.C.648

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We designed and fabricated 4H-SiC PIN avalanche photo-diodes (APD) for UV detection. The thickness of an intrinsic layer in a PIN structure was optimized in order to achieve the highest quantum efficiency at the wavelength of interest. The optimized 4H-SiC PIN APDs exhibited a maximum external quantum efficiency of > 80% at the wavelength of 280 nm and a gain greater than 40000. Both electrical and optical characteristics of the fabricated APDs were in agreement with those predicted from simulation.

引用

页码：648 / 650

页数：3

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