Investigation of the electrical properties of undoped gallium arsenide epitaxial layers

被引：0
|
作者：
Synowiec, Z [1 ]
Radziewicz, D [1 ]
Zborowska-Lindert, I [1 ]
机构：
[1] Wroclaw Univ Technol, Inst Microsyst Technol, PL-50327 Wroclaw, Poland
来源：
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ASDAM.2000.889503
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this investigation we have measured the electron concentration n=7x10(15) cm(-3) in the undoped epitaxial GaAs layer grown on the well conducting GaAs substrate, I-V characteristic resistance of the Schottky junction formed in that layer and we have evaluated layer resistivity rho =0.2 Omega cm, barrier potential phi =0.785 V, ideality factor eta =1.08 and series resistance Rs=5 Omega of the Schottky junction. Then we have measured I-V characteristics between the coplanar ohmic contact formed on the undoped epitaxial GaAs layer grown on SI GaAs substrate and we have evaluated breakdown electric field E-r=1.5 kV/cm, sheet resistivity R-g=10(9) Omega/square, and layer resistivity rho =5x10(4) Omega cm.
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页码：289 / 293
页数：5
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