Investigation of the electrical properties of undoped gallium arsenide epitaxial layers

In this investigation we have measured the electron concentration n=7x10(15) cm(-3) in the undoped epitaxial GaAs layer grown on the well conducting GaAs substrate, I-V characteristic resistance of the Schottky junction formed in that layer and we have evaluated layer resistivity rho =0.2 Omega cm, barrier potential phi =0.785 V, ideality factor eta =1.08 and series resistance Rs=5 Omega of the Schottky junction. Then we have measured I-V characteristics between the coplanar ohmic contact formed on the undoped epitaxial GaAs layer grown on SI GaAs substrate and we have evaluated breakdown electric field E-r=1.5 kV/cm, sheet resistivity R-g=10(9) Omega/square, and layer resistivity rho =5x10(4) Omega cm.