3D Integration Processes for Advanced Sensor Systems and High-Perfomance RF Components

被引:1
|
作者
Weber, J. [1 ]
Fernandez-Bolanos, M. [2 ]
Ionescu, A. M. [2 ]
Ramm, P. [1 ]
机构
[1] Fraunhofer Res Inst Microsyst & Solid State Techn, D-80686 Munich, Germany
[2] Ecole Polytech Fed Lausanne EPFL, Nanoelect Devices Lab Nanolab, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1149/08608.0029ecst
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Sensor systems are the key elements of today's automotive, health care, environmental and Internet-of-Things (IoT) applications. By using MEMS sensors data like physical or electrical parameters in production equipment, gas concentration in the environment or chemical parameters in fluids can be recorded, digitized and transferred for further processing e.g. by means of big data algorithms in a server or cloud environment. For realizing such systems advanced sensors, which are in many cases based on sophisticated nano-technologies have to be combined with standard CMOS devices, which digitize the analogue sensor signals and optimize the overall data acquisition and data transmission. 3D integration processes are most suitable for high performant and reliable integration of sensor functions and electronic processing and simultaneously minimize the footprint, weight and form-factor of the sensor/IC product. 3D integration processes as fine-pitch Trough-Silicon-Vias (TSV) technology and various wafer bond technologies will be introduced in this paper.
引用
收藏
页码:29 / 37
页数:9
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