Reflection-Based Short Pulse Generation in CMOS

被引:3
|
作者
Khoeini, Farzad [1 ]
Hadidian, Bahareh [1 ]
Zhang, Keshu [2 ]
Afshari, Ehsan [1 ]
机构
[1] Univ Michigan, Dept Elect & Comp Engn, Ann Arbor, MI 48109 USA
[2] Hefei Shinning Star Opt Elect Ltd Corp, Hefei 230041, Peoples R China
来源
关键词
CMOS; reflection; short pulse; short-circuited termination; transmission line;
D O I
10.1109/LSSC.2020.3018129
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this letter, a low cost, compact, and systematic method for generating a short pulse and efficiently delivering it to low impedance loads is proposed. The load can be a resistive on-chip or off-chip load, an antenna, or another stage such as a power combiner. The technique is inspired by time-domain reflectometry from a short-circuited termination. The technique is fully compatible with the CMOS technology. To show the feasibility of the idea, two chips are fabricated and tested in a low cost 0.11-mu m CMOS process with fT approximate to 80GHz. The full-width at half maximum (FWHM) of the pulses are 6.8 ps and 8.8 ps, and the amplitudes over a 50 Omega load are 0.62V and 1V. Either of the chips occupies 1160 x 540 mu m(2) in area.
引用
收藏
页码:318 / 321
页数:4
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