Ammonothermal synthesis of thick gallium nitride film employing acidic mineralizers

被引：14

作者：

Ehrentraut, Dirk ^{[1
]}

Kagamitani, Yuji ^{[1
]}

Yoshikawa, Akira ^{[1
]}

Hoshino, Naruhiro ^{[1
]}

Itoh, Hirohisa ^{[2
]}

Kawabata, Shinichiro ^{[2
]}

Fujii, Katsushi ^{[3
]}

Yao, Takafumi ^{[3
]}

Fukuda, Tsuguo ^{[1
]}

机构：

[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Mitsubishi Chem Corp, Ibaraki 3001295, Japan

[3] Tohoku Univ, Interdisciplinary Res Ctr, Aoba Ku, Sendai, Miyagi 9808578, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2008年 / 43卷 / 07期

关键词：

D O I：

10.1007/s10853-007-1949-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Fabrication of wurtzite-type gallium nitride (GaN) thick films on HPVE-grown {0001} GaN substrates under moderate ammonothermal conditions is reported. Supercritical ammonia (NH3) as solvent and the mineralizer ammonium chloride (NH4Cl) is employed for temperature and pressure conditions of 400-550 degrees C and <= 135 MPa, respectively. Growth rates of 30 mu m per day over long-term growth runs were obtained. The effect of surface morphology of the substrate on homoepitaxial nucleation of GaN films prepared from ammonoacid solutions is investigated. Two-dimensional nucleation is obtained for substrates etched by hot concentrated KOH prior film growth. In this case the interface between film and the (000 (1) over bar) substrate does not show any signs of voids or island nucleation. Cracking pattern reveals similar mechanical-elastical properties for film and substrate.

引用

页码：2270 / 2275

页数：6

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