N-doped ZnO-MoS2 binary heterojunctions: the dual role of 2D MoS2 in the enhancement of photostability and photocatalytic activity under visible light irradiation for tetracycline degradation
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作者:
Kumar, Suneel
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Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Indian Inst Technol Mandi, Adv Mat Res Ctr, Mandi 175005, Himachal Prades, IndiaIndian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Kumar, Suneel
[1
,2
]
Sharma, Vipul
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Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Indian Inst Technol Mandi, Adv Mat Res Ctr, Mandi 175005, Himachal Prades, IndiaIndian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Sharma, Vipul
[1
,2
]
Bhattacharyya, Kaustava
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Bhabha Atom Res Ctr, Div Chem, Bombay 400085, Maharashtra, IndiaIndian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Bhattacharyya, Kaustava
[3
]
Krishnan, Venkata
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Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Indian Inst Technol Mandi, Adv Mat Res Ctr, Mandi 175005, Himachal Prades, IndiaIndian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
Krishnan, Venkata
[1
,2
]
机构:
[1] Indian Inst Technol Mandi, Sch Basic Sci, Mandi 175005, Himachal Prades, India
[2] Indian Inst Technol Mandi, Adv Mat Res Ctr, Mandi 175005, Himachal Prades, India
[3] Bhabha Atom Res Ctr, Div Chem, Bombay 400085, Maharashtra, India
In this work, we report the fabrication of binary semiconductor heterojunctions comprising N-doped ZnO nanorods loaded with two-dimensional MoS2 nanoflowers in varying amounts, using a facile hydrothermal synthesis method. These semiconductor heterojunctions have been demonstrated to be highly efficient photocatalysts with enhanced performance under visible light irradiation for the degradation of a pharmaceutical pollutant, tetracycline. The superior photocatalytic activity of the heterojunctions can be attributed to the synergistic effect of N-doping of ZnO and loading of MoS2 leading to higher absorption of visible light, efficient separation of photogenerated charge carriers and rapid charge transfer to reaction sites, as per the conduction band potentials of both N-doped ZnO and MoS2. In addition, the two-dimensional nanoflower morphology of MoS2 provides more reaction sites for the adsorption of pollutants, due to its large surface area. Furthermore, the transfer of holes from the valence band of N-doped ZnO to the valence band of MoS2 prevents the photocorrosion of N-doped ZnO resulting in enhanced photostability of the catalyst during the reaction.
机构:
Department of Chemistry, University of Ioannina, Ioannina,45110, GreeceDepartment of Chemistry, University of Ioannina, Ioannina,45110, Greece
Karamoschos, Nikolaos
Bairamis, Feidias
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Department of Chemistry, University of Ioannina, Ioannina,45110, GreeceDepartment of Chemistry, University of Ioannina, Ioannina,45110, Greece
Bairamis, Feidias
Andrikopoulos, Konstantinos S.
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Department of Physics, University of Patras, Patras,26504, Greece
Foundation of Research and Technology Hellas, Institute of Chemical Engineering Sciences (ICE-HT), P.O. Box 1414, Rio Patras,26504, GreeceDepartment of Chemistry, University of Ioannina, Ioannina,45110, Greece
Andrikopoulos, Konstantinos S.
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Konstantinou, Ioannis
Tasis, Dimitrios
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Department of Chemistry, University of Ioannina, Ioannina,45110, Greece
University Research Center of Ioannina (URCI), Institute of Materials Science and Computing, Ioannina,45110, GreeceDepartment of Chemistry, University of Ioannina, Ioannina,45110, Greece
机构:
Int Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, JapanInt Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
Chang, Kun
Mei, Zongwei
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Int Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, JapanInt Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
Mei, Zongwei
Wang, Tao
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Int Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, JapanInt Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
Wang, Tao
Kang, Qing
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Int Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, JapanInt Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
Kang, Qing
Ouyang, Shuxin
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机构:
Tianjin Univ, TU NIMS Joint Res Ctr, Sch Mat Sci & Engn, Tianjin 300072, Peoples R ChinaInt Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
Ouyang, Shuxin
Ye, Jinhua
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Int Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
Tianjin Univ, TU NIMS Joint Res Ctr, Sch Mat Sci & Engn, Tianjin 300072, Peoples R ChinaInt Ctr Mat Nanoarchitecton WPI MANA, Environm Remediat Mat Unit, Tsukuba, Ibaraki 3050044, Japan
机构:
SRM Inst Sci & Technol, Res & Virtual Educ, Kattankulathur, Tamil Nadu 603203, IndiaSRM Inst Sci & Technol, Res & Virtual Educ, Kattankulathur, Tamil Nadu 603203, India
Sabarinathan, M.
Hayakawa, Y.
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Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku,Naka Ku, Hamamatsu, Shizuoka 4328011, JapanSRM Inst Sci & Technol, Res & Virtual Educ, Kattankulathur, Tamil Nadu 603203, India
Hayakawa, Y.
Harish, S.
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SRM Inst Sci & Technol, Dept Phys & Nanotechnol, Funct Mat & Energy Devices Lab, Kattankulathur 603203, Tamil Nadu, IndiaSRM Inst Sci & Technol, Res & Virtual Educ, Kattankulathur, Tamil Nadu 603203, India