Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination

被引：22

作者：

Nie, Kai-Wen ^{[1
]}

Xu, Wei-Zong ^{[1
]}

Ren, Fang-Fang ^{[1
]}

Zhou, Dong ^{[1
]}

Pan, Dan-Feng ^{[1
]}

Ye, Jian-Dong ^{[1
]}

Chen, Dun-Jun ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You-Dou ^{[1
]}

Lu, Hai ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 03期

基金：

中国国家自然科学基金;

关键词：

GaN p-i-n power diode; shallow bevel termination; inductive current sustaining capability; avalanche ruggedness; DEVICES;

D O I：

10.1109/LED.2020.2970552

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, small-angle beveled-mesa termination technique was developed in GaN p-i-n power diodes for high avalanche performances. With effective alleviation of electric field crowding effect at the junction sidewall, near uniform distribution of avalanche breakdown was realized. Resultantly, state-of-the-art inductive avalanche current density of similar to 31.5 kA/cm(2) and average parallel-plane breakdown electric field of 2.86 MV/cm was achieved in the terminated diodes. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted, under both repetitive dc reverse breakdown stresses and unclamped inductive switch conditions.

引用

页码：469 / 472

页数：4

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