Current-voltage characteristics of GaN and AlGaN p-i-n diodes

被引：6
|
作者：
Kuznetsov, NI [1 ]
Irvine, KG
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Cree Res Inc, Durham, NC 27713 USA
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 03期
关键词：
D O I：
10.1134/1.1187392
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The current-voltage characteristics of GaN and Al0.08Ga0.92N p-i-n diodes were investigated. The experimental p-i-n structures were grown by MOCVD on 6H-SiC with Si and Mg as dopants. The i region was formed by simultaneously doping with donor and acceptor impurities during growth. Analysis of the current-voltage characteristics showed that current flow in the p-i-n diodes is due to either drift of thermally excited holes or electron-hole recombination in the i region via impurity centers-just as predicted by the Ashley-Milnes theory. These impurity centers are attributed to Mg acceptor levels. (C) 1998 American Institute of Physics.
引用
收藏
页码：335 / 338
页数：4
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