Quantum anomalous Hall effect in graphene from Rashba and exchange effects

被引:613
|
作者
Qiao, Zhenhua [1 ]
Yang, Shengyuan A. [1 ]
Feng, Wanxiang [2 ,3 ]
Tse, Wang-Kong [1 ]
Ding, Jun [2 ,3 ]
Yao, Yugui [1 ,2 ,3 ]
Wang, Jian [4 ,5 ]
Niu, Qian [1 ]
机构
[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
[3] Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China
[4] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
[5] Univ Hong Kong, Ctr Theoret & Computat Phys, Hong Kong, Hong Kong, Peoples R China
来源
PHYSICAL REVIEW B | 2010年 / 82卷 / 16期
基金
美国国家科学基金会;
关键词
EPITAXIAL GRAPHENE; INDUCED BANDGAP; CONDUCTANCE; PHASE;
D O I
10.1103/PhysRevB.82.161414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the possibility of realizing quantum anomalous Hall effect in graphene. We show that a bulk energy gap can be opened in the presence of both Rashba spin-orbit coupling and an exchange field. We calculate the Berry curvature distribution and find a nonzero Chern number for the valence bands and demonstrate the existence of gapless edge states. Inspired by this finding, we also study, by first-principles method, a concrete example of graphene with Fe atoms adsorbed on top, obtaining the same result.
引用
收藏
页数:4
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