Electrical and optical properties of silicon, doped by erbium during sublimational molecular beam epitaxy

被引：0
|
作者：
Andreev, AY [1 ]
Andreev, BA [1 ]
Drozdov, MN [1 ]
Ellmer, H [1 ]
Kuznetsov, VP [1 ]
Kalugin, NG [1 ]
Krasilnic, ZF [1 ]
Karpov, YA [1 ]
Palmetshofer, L [1 ]
Piplits, K [1 ]
Rubtsova, RA [1 ]
Stepikhova, MV [1 ]
Uskova, EA [1 ]
Shmagin, VB [1 ]
Hutter, H [1 ]
机构：
[1] Russian Acad Sci, Inst Microstruct Phys, Nizhnii Novgorod, Russia
来源：
IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA | 1999年 / 63卷 / 02期
关键词：
D O I：
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
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页码：392 / 399
页数：8
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