Characterization of dislocations and suface potential in III-V nitride heterostructures

被引：0

作者：

Koley, G ^{[1
]}

Smart, J ^{[1
]}

Shealy, JR ^{[1
]}

Spencer, MG ^{[1
]}

机构：

[1] Cornell Univ, Dept Elect & Comp Engn, Ithaca, NY 14853 USA

来源：

2000 IEEE/CORNELL CONFERENCE ON HIGH PERFORMANCE DEVICES, PROCEEDINGS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characterization of III-V nitrides by Electrostatic Force Microscopy (EFM) and Atomic Force Microscopy (AFM) is reported. The samples studied consist of Aluminum Gallium Nitride/Gallium Nitride (AlxGa1-xN/GaN) heterostructures sown by Metal Organic Chemical Vapor Deposition (MOCVD) on sapphire substrate. The Al concentration and the thickness of the top layer of the heterostructure (AlxGa1-xN) have been varied in this study. The morphology of the surfaces was determined by AFM, while EFM performed in conjunction with AFM was used to measure the surface barrier potential. The surfaces of these heterostructures show regular step flow growth pinned by dislocations (present: in concentrations of 10(8)-10(9) cm(-2)). The surface potential variation around the dislocations have been observed to be of 0. 1-0,3 V and having a FWHM (as determined by EFM) of 100-200 nm.

引用

页码：200 / 206

页数：7

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