Study on Current-Driven IGBT Driver Circuit

被引:1
|
作者
Abe, Yudai [1 ]
Iwabuchi, Akio [2 ]
Matsuda, Jun-ichi [1 ]
Yamamoto, Souma [1 ]
Kuwana, Anna [1 ]
Du, Haoyang [1 ]
Kamio, Takafumi [1 ]
Hosono, Takashi [1 ]
Kobayashi, Haruo [1 ]
机构
[1] Gunma Univ, Div Elect & Informat, 1-5-1 Tenjin Cho, Kiryu, Gumma 3760052, Japan
[2] Sanken Elect Co Ltd, 3-6-3 Kitano, Saitama 3520003, Japan
关键词
IGBT; Driver Circuit; Current-Mode; Switching Loss; Overshoot;
D O I
10.1109/ITC-CSCC52171.2021.9501438
中图分类号
TP [自动化技术、计算机技术];
学科分类号
0812 ;
摘要
This paper studies a current-driven IGBT driver circuit to reduce the collector voltage overshoot and switching loss during its turn-off. The gate voltage operating region is divided into 4 and for each region, the optimal amount of the pulling current from the IGBT gate is used. Our simulations show that with the current-driven IGBT driver, the overshoot voltage is reduced by 31% and the switching loss is by 35%, compared to the voltage-driven IGBT driver usage case.
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页数:4
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