InP microdisk lasers on silicon wafer:: CW room temperature operation at 1.6μm

被引：41
|
作者：
Seassal, C
Rojo-Romeo, P
Letartre, X
Viktorovitch, P
Hollinger, G
Jalaguier, E
Pocas, S
Aspar, B
机构：
[1] Ecole Cent Lyon, Lab Elect Optoelect & Microsyst, UMR CNRS 5512, F-69131 Ecully, France
[2] CEA Grenoble, LETI, Dept Microtechnol, F-38054 Grenoble 9, France
来源：
ELECTRONICS LETTERS | 2001年 / 37卷 / 04期
关键词：
D O I：
10.1049/el:20010173
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Microdisk lasers are fabricated in an InP/InGaAs MQW heterostructure transferred onto silicon. The CW room temperature laser operation of such devices at 1.6 mum is reported.
引用
收藏
页码：222 / 223
页数：2
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