MOCVD Cobalt Oxide Deposition from Inclusion Complexes: Decomposition Mechanism, Structure, and Properties

被引：8
|
作者：
Papadopoulos, N. D. [1 ]
Karayianni, H. S. [2 ]
Tsakiridis, P. E. [1 ]
Perraki, M. [1 ]
Sarantopoulou, E. [3 ]
Hristoforou, E. [1 ]
机构：
[1] Natl Tech Univ Athens, Met Phys Lab, Sch Min & Met Engn, Athens 15780, Greece
[2] Natl Tech Univ Athens, Lab Phys Chem, Sect Mat Sci & Engn, Sch Chem Engn, Athens 15780, Greece
[3] Natl Inst Res, Athens, Greece
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 01期
关键词：
CHEMICAL-VAPOR-DEPOSITION; LIQUID-INJECTION MOCVD; CO3O4; THIN-FILMS; THERMAL-DECOMPOSITION; TRICARBONYL NITROSYL; GROWTH; CYCLODEXTRINS; COATINGS; PRECURSORS; MORPHOLOGY;
D O I：
10.1149/1.3509698
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A novel precursor based on the inclusion complex of beta-cyclodextrin with CoI(2) is proposed for the deposition of cobalt oxide films by metallorganic chemical vapor deposition (MOCVD). Deposition is viable through an abnormal behavior of the inclusion molecules during heating. A decomposition mechanism based on experimental results is proposed, while the films are examined in terms of microstructure, electrical, and magnetic properties. A uniform, nanocrystalline structure of Co(3)O(4) was revealed, along with impurities of silicide phases. The films presented a semiconducting behavior and minor in-plane magnetization. (c) 2010 The Electrochemical Society.
引用
收藏
页码：P5 / P13
页数：9
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