Near-Infrared photodetectors based on 2D Bi2S3

被引：20

作者：

Chitara, Basant ^{[1
]}

Kolli, Bhargava S. C. ^{[2
]}

Yan, Fei ^{[1
]}

机构：

[1] North Carolina Cent Univ, Dept Chem & Biochem, Durham, NC 27707 USA

[2] Univ Florida, Dept Biol, Gainesville, FL 32611 USA

来源：

CHEMICAL PHYSICS LETTERS | 2022年 / 804卷

基金：

美国国家科学基金会;

关键词：

CVD; 2D Bi2S3; NIR photodetectors; HIGH-PERFORMANCE; ELASTIC PROPERTIES; HIGH-RESPONSIVITY; LAYER; MOS2; NANOSHEETS; DEGRADATION; OXIDATION; GROWTH; GAS;

D O I：

10.1016/j.cplett.2022.139876

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Herein, we report for the first time, the chemical vapor deposition of 2D bismuth sulfide (Bi). The 2D Bi2S3-based field-effect transistor showed an n-type electron mobility of 12.5 cm(-2)V(-1)s(-1) with an on/off ratio of 10. Under 785 nm illumination, the 2D Bi2S3-based photodetector exhibited a photo responsivity of 16 AW(-1), an external quantum efficiency of 2500%, a detectivity in the order of 10(10) Jones and a linear dynamic range of 35 dB with a fast response time of 100 ms. Our results suggest that Bi2S3 could be a promising new 2D material for the next-generation electronic and optoelectronic devices.

引用

页数：6

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