Atomic and electronic band structures of Y-doped Al2O3 grain boundaries

被引:8
|
作者
Yang, Chuchu [1 ]
Feng, Bin [1 ]
Wei, Jiake [1 ,2 ]
Tochigi, Eita [3 ,4 ]
Shibata, Naoya [1 ,5 ]
Ikuhara, Yuichi [1 ,2 ,5 ]
机构
[1] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 2-11-16 Yayoi, Tokyo 1138656, Japan
[2] Kyoto Univ, Elements Strategy Initiat Struct Mat, Kyoto 6068501, Japan
[3] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[4] Japan Sci & Technol Agcy, PRESTO, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
[5] Japan Fine Ceram Ctr, Nanostruct Res Lab, Nagoya, Aichi 4568587, Japan
基金
日本学术振兴会;
关键词
Alumina; Grain boundary segregation; STEM; EDS; VEELS; CREEP RESISTANCE; MICROSTRUCTURAL EVOLUTION; ALUMINA; YTTRIUM; SEGREGATION;
D O I
10.2109/jcersj2.21168
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An Y-doped Sigma 7{4 (5) over bar 10}[0001] Al2O3 grain boundary was fabricated by the bicrystal method. The grain boundary segregation structure was studied using atomic-resolution scanning transmission electron microscopy and energy dispersive X-ray spectroscopy. It was found that the atomic structure of the Y-doped grain boundary differs from that of the non-doped grain boundary, indicating that Y doping induced the structural transformation from asymmetrical shape to symmetrical shape in the grain boundary core. Apart from Y, impurities of Ca were also segregated at the grain boundary. Both Y3+ and Ca2+ are segregated at the same atomic columns in the grain boundary, mainly due to their larger ionic size compared with Al3+. In addition, valence electron energy loss spectroscopy measurements indicate that the bandgap energy of the doped grain boundary is about 0.5 eV smaller than that of the pristine grain boundary. (C)2022 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码:286 / 289
页数:4
相关论文
共 50 条
  • [31] Surface oxygen atomic structures on photoactivated Al2O3
    Klimovskii, AO
    Krutitskaja, TK
    Lisachenko, AA
    Prudnikov, IM
    PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 1998, 3-4 : 167 - 174
  • [32] Electronic and atomic structures of KFe2Se2 grain boundaries
    Fan, Wei
    Liu, Da-Yong
    Zeng, Zhi
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 2014, 497 : 110 - 118
  • [33] Atomic structures and electronic properties of phosphorene grain boundaries
    Guo, Yu
    Zhou, Si
    Zhang, Junfeng
    Bai, Yizhen
    Zhao, Jijun
    2D MATERIALS, 2016, 3 (02):
  • [34] Yttrium-segregated grain boundaries in α-Al2O3:: An EELS study
    Gülgün, MA
    Ching, WY
    Rühle, M
    INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS, IIB98, 1999, 294-2 : 289 - 292
  • [36] Spatially resolved analytical electron microscopy at grain boundaries of α-Al2O3
    Nufer, S
    Marinopoulos, AG
    Elsässer, C
    Kurtz, W
    Rühle, M
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2002, 18 (02) : 189 - 190
  • [37] THE INDENTIFICATION OF THIN AMORPHOUS FILMS AT GRAIN-BOUNDARIES IN AL2O3
    SIMPSON, YK
    CARTER, CB
    MORRISSEY, KJ
    ANGELINI, P
    BENTLEY, J
    JOURNAL OF MATERIALS SCIENCE, 1986, 21 (08) : 2689 - 2696
  • [38] Electronic structure and optical properties of Nb doped Al2O3 on Si by atomic layer deposition
    Xu, Yan
    Chen, Lin
    Sun, Qing-Qing
    Gu, Jing-Jing
    Lu, Hong-Liang
    Wang, Peng-Fei
    Ding, Shi-Jin
    Zhang, David Wei
    SOLID STATE COMMUNICATIONS, 2010, 150 (35-36) : 1690 - 1692
  • [39] Exaggerated grain growth in Fe-doped Al2O3
    Tzing, WH
    Tuan, WH
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1999, 18 (14) : 1115 - 1117
  • [40] EFFECTS OF SOLUTE CONCENTRATION ON GRAIN GROWTH IN Y2O3 AND AL2O3
    JORGENSE.PJ
    AMERICAN CERAMIC SOCIETY BULLETIN, 1967, 46 (09): : 902 - &